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001     174320
005     20240922203813.0
024 7 _ |2 ISSN
|a 0022-0248
024 7 _ |2 INSPEC
|a 3527807
024 7 _ |2 DOI
|a 10.1016/0022-0248(89)90660-X
024 7 _ |2 HSB
|a ama8281
024 7 _ |2 SCOPUS
|a SCOPUS:2-s2.0-0024715918
024 7 _ |2 WOS
|a WOS:A1989AM75600031
037 _ _ |a RWTH-CONV-051564
041 _ _ |a English
100 1 _ |0 P:(DE-82)114219
|a Westphalen, R.
|b 0
|e Author
245 _ _ |a Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP
|h online, print
260 _ _ |a Amsterdam
|b North-Holland Publ. Co.
|c 1989
336 7 _ |0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
|a Journal Article
|b journal
|m journal
336 7 _ |2 DataCite
|a Output Types/Journal article
336 7 _ |0 0
|2 EndNote
|a Journal Article
336 7 _ |2 BibTeX
|a ARTICLE
336 7 _ |2 ORCID
|a JOURNAL_ARTICLE
336 7 _ |2 DRIVER
|a article
591 _ _ |a Germany
700 1 _ |0 P:(DE-82)038020
|a Jürgensen, H.
|b 1
|e Author
700 1 _ |0 P:(DE-82)108534
|a Balk, P.
|b 2
|e Author
773 _ _ |0 PERI:(DE-600)1466514-1
|a 10.1016/0022-0248(89)90660-X
|n 4
|p 982-984
|t Journal of crystal growth
|v 96
|x 0022-0248
909 C O |o oai:publications.rwth-aachen.de:174320
|p VDB
915 1 _ |0 StatID:(DE-HGF)0031
|2 StatID
|a Peer reviewed article
920 1 _ |0 I:(DE-82)ama216_20140620
|k ama216
|l Lehr- und Forschungsgebiet Halbleitertechnologie
|x 0
920 1 _ |0 I:(DE-82)616210_20140620
|k 616210
|l Lehrstuhl und Institut für Halbleitertechnik
|x 1
970 _ _ |a ama8281
980 _ _ |a journal
980 _ _ |a I:(DE-82)ama216_20140620
980 _ _ |a I:(DE-82)616210_20140620
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a ConvertedRecord


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