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GrapheneCore3

Graphene Flagship Core Project 3

CoordinatorCNRS - Institut des Sciences Biologiques ; Consorzio Nazionale Interuniversitario Per Le Telecomunicazioni ; AMALYST LIMITED ; Imperial College of Science Technology and Medicine ; THALES SA ; FUNDACION IMDEA NANOCIENCIA ; University of Augsburg ; VARTA MICROBATTERY GMBH ; TEKNOLOGIAN TUTKIMUSKESKUS VTT ; Lancaster University ; Inserm ; Université de Strasbourg ; TU Wien ; University of Sheffield ; Karolinska Institutet Innovations (Sweden) ; University De Lille ; Umeå University ; FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA ; Atomic Energy and Alternative Energies Commission ; Chalmers University of Technology ; ARCELORMITTAL ESPANA SA ; BASF SE ; University of Regensburg ; SCHAFFHAUSEN INSTITUTE OF TECHNOLOGY AG ; PROGNOMICS LTD ; BIOAGE SRL ; CONFINIS AG ; VEONEER SWEDEN AB ; LEONARDO - SOCIETA PER AZIONI ; NOKIA SOLUTIONS AND NETWORKS ITALIA SPA ; DALLARA AUTOMOBILI SPA ; FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA ; GRAPHENEA SEMICONDUCTOR SL ; BARNICES Y PINTURAS MODERNAS SOCIEDAD ANONIMA ; AIRBUS HELICOPTERS ; Emberion Ltd ; Naturality Research & Development ; AVANZARE INNOVACION TECNOLOGICA SL ; GRAPHENE-XT SRL ; BEDIMENSIONAL SPA ; SIEC BADAWCZA LUKASIEWICZ - INSTYTUT TECHNOLOGII MATERIALOW ELEKTRONICZNYCH ; MEDICA S.P.A. ; PHI-STONE AG ; ELLINIKO MESOGEIAKO PANEPISTIMIO ; ICON LIFESAVER LIMITED ; TYOTERVEYSLAITOS ; SIXONIA TECH GMBH ; ABB AB ; SIEMENS AKTIENGESELLSCHAFT ; CRAYONANO AS ; NAWATECHNOLOGIES ; VERSARIEN PLC ; BRUNO BALDASSARI & FRATELLI SPA ; TREVIRA GMBH ; CASALS CARDONA INDUSTRIAL SA ; INTERNACIONAL DE COMPOSITES SA ; INSTITUTO DE TECNOLOGIAS QUIMICAS EMERGENTES DE LA RIOJA ASOCIACION ; GREATCELL SOLAR ITALIA SOCIETA' A RESPONSABILITA' LIMITATA ; POLYMEM ; FLEXENABLE LIMITED ; SPAC SPA ; ERICSSON AB ; GRAPHMATECH AB ; EMBERION OY ; CAMBRIDGE RAMAN IMAGING LTD ; CENTRO DE INVESTIGACION COOPERATIVA DE ENERGIAS ALTERNATIVAS FUNDACION, CIC ENERGIGUNE FUNDAZIOA ; FINISAR GERMANY GMBH ; University of London - University College London ; Fundación Tecnalia Research & Innovation ; Karlsruher Institut für Technologie ; Technology and Management Services (Switzerland) ; University of Minho ; STIFTELSEN CHALMERS INDUSTRITEKNIK ; Friedrich Schiller University Jena ; Consorci Institut D'Investigacions Biomediques August Pi I Sunyer ; National Research Council ; University of Pisa ; AIRBUS DEFENCE AND SPACE GMBH ; Swiss Federal Institute of Technology in Zurich ; TU Dresden ; BRETON SPA ; Carlos III University of Madrid ; EIDGENOSSISCHE MATERIALPRUFUNGS- UND FORSCHUNGSANSTALT ; FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. ; Novalia Limited ; University of Tartu ; INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM ; University of Geneva ; Printed Electronics Limited ; University of Warwick ; Bulgarian Academy of Sciences Institute of Mechanics ; IDRYMA TECHNOLOGIAS KAI EREVNAS ; SOCIETE NATIONALE DE CONSTRUCTION AEROSPATIALE SONACA SA ; Sorbonne University ; FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG ; GUGER TECHNOLOGIES OG ; Delft University of Technology ; Max Planck Society ; ENERGIATUDOMANYI KUTATOKOZPONT ; University of London - Queen Mary University of London
Grant period2020-04-01 - 2023-09-30
Funding bodyEuropean Union
Call numberH2020-SGA-FET-GRAPHENE-2019
Grant number881603
IdentifierG:(EU-Grant)881603

Note: This proposal describes the third core project of the Graphene Flagship. It forms the fourth phase of the FET flagship and is characterized by a continued transition towards higher technology readiness levels, without jeopardizing our strong commitment to fundamental research. Compared to the second core project, this phase includes a substantial increase in the market-motivated technological spearhead projects, which account for about 30% of the overall budget. The broader fundamental and applied research themes are pursued by 15 work packages and supported by four work packages on innovation, industrialization, dissemination and management. The consortium that is involved in this project includes over 150 academic and industrial partners in over 20 European countries.
     

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;
2D Materials for Neuromorphic Computing Devices
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12 [Piscataway, NJ] : IEEE () [10.1109/EDTM61175.2025.11041583]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
2D noble metal dichalcogenide based nanoelectromechanical sensors
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2025-06475] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2025  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
Flexible complementary metal oxide semiconductor logic circuits based on 2D transition metal dichalcogenides
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2025-05177] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2024  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing
Scientific reports 15(1), 14706 () [10.1038/s41598-025-96207-z]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Super-Resolution Imaging of Nanoscale Inhomogeneities in hBN-Covered and Encapsulated Few-Layer Graphene
Advanced science 12(14), 2409039 () [10.1002/advs.202409039]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article (Review Article)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Towards wafer-scale 2D material sensors
2D Materials 12(2), 023002 () [10.1088/2053-1583/adac73]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Multiparameter Admittance Spectroscopy for Investigating Defects in MoS₂ Thin-Film MOSFETs
IEEE transactions on electron devices : ED 73(3), 1506-1513 () [10.1109/TED.2025.3527413]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
2D materials technology for RF integrated electronics
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2025-00435] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2024  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
2D Materials 12(1), 015017 () [10.1088/2053-1583/ad96c9]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
npj 2D materials and applications 8, 23 () [10.1038/s41699-024-00461-0]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2020-09-05, last modified 2023-02-11
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