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BMBF 16ME0400

Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II -

Grant period2021-11-15 - 2026-11-14
Funding bodyBundesministerium für Bildung und Forschung
 BMBF
Further information: Homepage
IdentifierG:(BMBF)16ME0400

 

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy
Nature Communications 16, 7433 () [10.1038/s41467-025-62592-2]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
npj 2D materials and applications 9(1), 41 () [10.1038/s41699-025-00566-0]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
Towards trustworthy neuromorphic computing: an analysis of hardware security and reliability risks
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2025-01929] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2025  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
npj 2D materials and applications 8(1), 35 () [10.1038/s41699-024-00471-y]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article/Contribution to a book  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Advanced functional materials 34(15), 2300428 () [10.1002/adfm.202300428] special issue: "Materials for Memristors Devices"  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2024-05-10, last modified 2024-05-17


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