BMBF 16ME0400
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II -
| Grant period | 2021-11-15 - 2026-11-14 |
| Funding body | Bundesministerium für Bildung und Forschung |
| BMBF | |
| Further information: | Homepage |
| Identifier | G:(BMBF)16ME0400 |
All known publications ...
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Journal Article
Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips
Advanced functional materials e27644 (2026) [10.1002/adfm.202527644]
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Journal Article
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials e26682 (2025) [10.1002/adfm.202526682]
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Preprint
Water-based, large-scale transfer of 2D materials grown on sapphire substrates
18 Seiten (2025) [10.21203/rs.3.rs-7544328/v1]
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Abstract/Contribution to a book/Contribution to a conference proceedings
Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
2025 Silicon Nanoelectronics Workshop : June 8-9, 2025, Rihga Royal Hotel Kyoto, Kyoto, Japan : workshop abstracts / AP, [the Japan Society of Applied Physics], Electron Devices Society ; general chair: Kuniyuki Kakushima (Institute of Science Tokyo)
2025 Silicon Nanoelectronics Workshop, SNW, KyotoKyoto, Japan, 8 Jun 2025 - 9 Jun 2025
[Piscataway, NJ] : IEEE 80-81 (2025) [10.23919/SNW65111.2025.11097209]
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Contribution to a book/Contribution to a conference proceedings
Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
[Piscataway, NJ] : IEEE (2025) [10.1109/EDTM61175.2025.11041161]
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Contribution to a book/Contribution to a conference proceedings
2D Materials for Neuromorphic Computing Devices
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
[Piscataway, NJ] : IEEE (2025) [10.1109/EDTM61175.2025.11041583]
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Journal Article
Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy
Nature Communications 16, 7433 (2025) [10.1038/s41467-025-62592-2]
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Journal Article
Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
npj 2D materials and applications 9(1), 41 (2025) [10.1038/s41699-025-00566-0]
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Dissertation / PhD Thesis
Towards trustworthy neuromorphic computing: an analysis of hardware security and reliability risks
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen (2025) [10.18154/RWTH-2025-01929] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2025
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Journal Article
Volatile mos2 memristors with lateral silver ion migration for artificial neuron applications
Small science 5(5), 2400523 (2025) [10.1002/smsc.202400523]
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All known publications ...
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