Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials

Rathnaweera, Dasuni N.; Kumar, K. Ramesh; Tewari, Sumanta; Dronskowski, Richard; Winiarski, Michał J.; Huai, Xudong; Tran, Thao T.; Bartel, Christopher J.; Schlesinger, Jane; Wang, YiXu

doi:10.1039/D5TC02333E

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Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials - RWTH-2026-00262

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