Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials

Rathnaweera, Dasuni N.; Kumar, K. Ramesh; Tewari, Sumanta; Dronskowski, Richard; Winiarski, Michał J.; Huai, Xudong; Tran, Thao T.; Bartel, Christopher J.; Schlesinger, Jane; Wang, YiXu

doi:10.1039/D5TC02333E

Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials

Rathnaweera, Dasuni N. ; Huai, Xudong ; Kumar, K. Ramesh ; Wang, YiXu^RWTH* ; Schlesinger, Jane ; Bartel, Christopher J. ; Tewari, Sumanta ; Winiarski, Michał J. ; Dronskowski, Richard^RWTH* ; Tran, Thao T. (Corresponding author)

In
Journal of materials chemistry / C

2025

ImpressumLondon [u.a.] : RSC

ISSN2050-7534

First published 22 Oct 2025

Online
DOI: 10.1039/D5TC02333E
10.1039/D5TC02333E
DOI: 10.1039/d5tc02333e
10.1039/d5tc02333e
DOI: 10.18154/RWTH-2026-00262
URL: https://publications.rwth-aachen.de/record/1024699/files/1024699.pdf

Einrichtungen

Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
PDF

Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105025116230
WOS Core Collection: WOS:001631962800001

Interne Identnummern
RWTH-2026-00262
Datensatz-ID: 1024699

Beteiligte Länder
Germany, Poland, USA

Lizenzstatus der Zeitschrift

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Creative Commons Attribution-NonCommercial CC BY-NC 3.0

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