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Replacing Doping in Nano-Silicon: Ultimate Miniaturization, Energy Efficiency, and Cryo-Functionality

; ; ; ; ; ; ; ; ; ; ; ;

In
ACS applied materials & interfaces 17(37), Seiten/Artikel-Nr.:52325-52335

ImpressumWashington, DC : American Chemical Society

ISSN1944-8252

Online
DOI: 10.1021/acsami.5c08073


Einrichtungen

  1. Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik (616210)


Thematische Einordnung (Klassifikation)
DDC: 600


Dokumenttyp
Journal Article (Letter)

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105016527804
WOS Core Collection: WOS:001564364700001
PubMed: pmid:40902997
OpenAlex: W4414003246

Interne Identnummern
RWTH-2026-01457
Datensatz-ID: 1028106

Beteiligte Länder
Australia, Germany, Italy

Lizenzstatus der Zeitschrift

 GO

Medline ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Public records
Publications database
616210
 Record created 2026-02-05, last modified 2026-09-14
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