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Dynamic Compensation of Threshold-Voltage Shift in SiGe SB-FET for Operation in Ultra-wide Temperature Range

; ; ;

In
Device Research Conference 2025 : workshop proceedings : date of conference: 22-25 June 2025; conference location: Durham, NC, USA / DRC, 83rd Device Research Conference, June 22-25, 2025, Duke University, Durham, North Carolina; sponsors and organizers: IEEE, Electron Devices Society, Nextron - Micro Probe System, NSF ; general chair: Saptarshi Das (Penn State University, USA)

Konferenz/Event:2025 Device Research Conference , Durham, NC , USA , DRC , 2025-06-22 - 2025-06-25

ImpressumPiscataway, NJ, USA : IEEE

ISBN979-8-3503-9283-8, 979-8-3503-9284-5

Online
DOI: 10.1109/DRC66027.2025.11215163


Einrichtungen

  1. Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik (616210)



Dokumenttyp
Contribution to a book/Contribution to a conference proceedings

Format
online

Sprache
English

Interne Identnummern
RWTH-2026-01459
Datensatz-ID: 1028108

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The record appears in these collections:
Document types > Events > Contributions to a conference proceedings
Document types > Books > Contributions to a book
Faculty of Electrical Engineering and Information Technology (Fac.6)
Documents in print
Public records
616210

 Record created 2026-02-05, last modified 2026-02-06



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