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Predictive Reliability Modeling for NSFET Optimization—Part II: HCD and BTI
Tyaginov, Stanislav ; Kao, Ethan ; Jungemann, ChristophRWTH* ; Makarov, Alexander ; Bufler, Fabian M. ; Panarella, Luca ; Bastos, João ; Yang, Sheng ; Vandemaele, Michiel ; Van de Put, Maarten L. ; Hellings, Geert ; Chasin, Adrian ; Kaczer, Ben ; Houssa, Michel
In
IEEE transactions on electron devices : ED
2026
ImpressumNew York, NY : IEEE
ISSN0018-9383
Date of Publication: 13 April 2026
Online
DOI: 10.1109/TED.2026.3678529
10.1109/TED.2026.3678529
Einrichtungen
- RWTH Aachen (hsbk000000)
Thematische Einordnung (Klassifikation)
DDC: 620
Dokumenttyp
Journal Article
Format
online
Sprache
English
Anmerkung
Peer reviewed article
Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105036641713
WOS Core Collection: WOS:001743239800001
Interne Identnummern
RWTH-2026-04766
Datensatz-ID: 1034504
Beteiligte Länder
Belgium, Germany
Lizenzstatus der Zeitschrift


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