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611410

Lehrstuhl und Institut für Theoretische Elektrotechnik
IDI:(DE-82)611410_20140620

⇧ RWTH Aachen ⇧

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Predictive Reliability Modeling for NSFET Optimization—Part II: HCD and BTI
IEEE transactions on electron devices : ED 73(8), 4572-4580 () [10.1109/TED.2026.3678529]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Predictive reliability modeling for NSFET optimization—part i: carrier transport and heat generation
IEEE transactions on electron devices : ED 73(8), 4558-4571 () [10.1109/TED.2026.3677019]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
Simulation of the Full Spatio-Temporal Evolution of Ultrafast Terahertz Harmonic Generation from Photoionized Holes in Silicon at Cryogenic Temperature
Journal of infrared, millimeter, and terahertz waves 46(12), 85 () [10.1007/s10762-025-01105-0]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;
Thermodynamically consistent stabilization of the drift-diffusion model for arbitrary band structures and carrier statistics
Journal of computational electronics 24(6), 171 () [10.1007/s10825-025-02412-4]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation
IEEE transactions on electron devices : ED () [10.1109/TED.2025.3563813]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization
IEEE transactions on electron devices : ED 72(3), 1523-1527 () [10.1109/TED.2025.3535461]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
Modeling the spatio-temporal evolution of oxygen vacancies in valence change memory cells
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2024-10672] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2024  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
IEEE transactions on electron devices : ED 71(4), 2322-2328 () [10.1109/TED.2024.3361410]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space
Journal of computational electronics 23(1), 1-11 () [10.1007/s10825-023-02125-6]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article/Contribution to a book  ;  ;
Investigation of the Large Variability of HfO2-Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model
Physica status solidi / A 221(22), 2300403 () [10.1002/pssa.202300403] special issue: "Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics / Issue Edited by: Matthias Wuttig, Regina Dittmann, Rainer"  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2014-07-16, last modified 2022-01-21



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