611410
Lehrstuhl und Institut für Theoretische Elektrotechnik| ID | I:(DE-82)611410_20140620 |
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Journal Article
Predictive Reliability Modeling for NSFET Optimization—Part II: HCD and BTI
IEEE transactions on electron devices : ED 73(8), 4572-4580 (2026) [10.1109/TED.2026.3678529]
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Journal Article
Predictive reliability modeling for NSFET optimization—part i: carrier transport and heat generation
IEEE transactions on electron devices : ED 73(8), 4558-4571 (2026) [10.1109/TED.2026.3677019]
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Journal Article
Simulation of the Full Spatio-Temporal Evolution of Ultrafast Terahertz Harmonic Generation from Photoionized Holes in Silicon at Cryogenic Temperature
Journal of infrared, millimeter, and terahertz waves 46(12), 85 (2025) [10.1007/s10762-025-01105-0]
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Journal Article
Thermodynamically consistent stabilization of the drift-diffusion model for arbitrary band structures and carrier statistics
Journal of computational electronics 24(6), 171 (2025) [10.1007/s10825-025-02412-4]
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Journal Article
Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation
IEEE transactions on electron devices : ED (2025) [10.1109/TED.2025.3563813]
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Journal Article
Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization
IEEE transactions on electron devices : ED 72(3), 1523-1527 (2025) [10.1109/TED.2025.3535461]
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Dissertation / PhD Thesis
Modeling the spatio-temporal evolution of oxygen vacancies in valence change memory cells
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen (2024) [10.18154/RWTH-2024-10672] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2024
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Journal Article
Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
IEEE transactions on electron devices : ED 71(4), 2322-2328 (2024) [10.1109/TED.2024.3361410]
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Journal Article
A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space
Journal of computational electronics 23(1), 1-11 (2024) [10.1007/s10825-023-02125-6]
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Journal Article/Contribution to a book
Investigation of the Large Variability of HfO2-Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model
Physica status solidi / A 221(22), 2300403 (2023) [10.1002/pssa.202300403] special issue: "Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics / Issue Edited by: Matthias Wuttig, Regina Dittmann, Rainer"
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All known publications ...
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