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First-principles simulation of hydrogen interaction in amorphous silicon nitride



In
Defect and impurity engineered semiconductors and devices III : symposium held [at the 2002 MRS spring meeting], April 1 - 5, 2002, San Francisco, California, U.S.A. / ed.: S. Ashok ..., Seiten/Artikel-Nr: 283-288

Konferenz/Event:Defect and impurity engineered semiconductors and devices III , San Francisco, California , USA , 2002-04-01 - 2002-04-04

ImpressumWarrendale, Pa. : Materials Research Society

Umfang283-288

ISBN1-55899-665-9

ReiheMaterials Research Society symposium proceedings ; 719

Einrichtungen

  1. Lehrstuhl für Festkörper- und Quantenchemie und Institut für Anorganische Chemie (151110)
  2. Fachgruppe Chemie (150000)



Dokumenttyp
Contribution to a conference proceedings/Contribution to a book

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
WOS Core Collection: WOS:000178622200041

Interne Identnummern
RWTH-CONV-178987
Datensatz-ID: 106607

Beteiligte Länder
Germany

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The record appears in these collections:
Document types > Events > Contributions to a conference proceedings
Document types > Books > Contributions to a book
Faculty of Mathematics and Natural Sciences (Fac.1) > Department of Chemistry
Public records
Publications database
151110
150000
 Record created 2013-01-28, last modified 2024-07-19
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