; ;
In
2010 IEEE Energy Conversion Congress and Exposition (ECCE 2010) : Atlanta, Georgia, USA, 12 - 16 September 2010 / [sponsored by the IEEE Power Electronics and Industry Applications Societies], Seiten/Artikel-Nr: 4551 -4557
2010
Online
DOI: 10.1109/ECCE.2010.5618410
Einrichtungen
Inhaltliche Beschreibung (Schlagwörter)
ETO (frei) ; IETO (frei) ; MOS assisted turn-off (frei) ; MOS-controlled thyristors (frei) ; MOSFET (frei) ; commutation (frei) ; driver circuits (frei) ; driver design (frei) ; gate commutated thyristor (frei) ; integrated emitter turn-off thyristor (frei) ; parasitic component (frei) ; power MOSFET (frei) ; thyristor applications (frei) ; thyristor based high power semiconductor device (frei)
Dokumenttyp
Contribution to a book/Contribution to a conference proceedings
Format
online, print
Sprache
English
Anmerkung
Peer reviewed article
Externe Identnummern
INSPEC: 11628878
SCOPUS: SCOPUS:2-s2.0-78650147744
WOS Core Collection: WOS:000562726304108
Interne Identnummern
RWTH-CONV-190156
Datensatz-ID: 118983
Beteiligte Länder
Germany