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Electrical Properties of Thermally Oxidized AlInN/AlN/GaN-based Metal Oxide Semiconductor Hetero Field Effect Transistors
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In
Journal of applied physics 110(8), Seiten/Artikel-Nr.:084501
2011
Online
DOI: 10.1063/1.3647589
Einrichtungen
Dokumenttyp
Journal Article
Format
online, print
Sprache
English
Anmerkung
Peer reviewed article
Externe Identnummern
INSPEC: 12381360
WOS Core Collection: WOS:000296519900146
SCOPUS: SCOPUS:2-s2.0-80655128541
Interne Identnummern
RWTH-CONV-026580
Datensatz-ID: 147178
Beteiligte Länder
Germany, Slovakia
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The record appears in these collections: |
Record created 2013-01-28, last modified 2025-11-13