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611610

Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik
IDI:(DE-82)611610_20140620

RWTH Aachen

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Rethinking alkaline water electrolysis under industrial conditions
Nature reviews / Electrical engineering () [10.1038/s44287-026-00302-w]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;
Improved Selector Behavior in Ultrathin Chromium-Doped V2O3 Films
Physica status solidi / A 223(12), e70403 () [10.1002/pssa.70403]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
The Influence of Residual Ion Drift During Programming of Chip-Integrated Nanoscale HfO2-Based Memristive Devices
Advanced electronic materials () [10.1002/aelm.202500891]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;
Spectroscopic investigation of the structural and electronic properties of oxygen-deficient tantalum oxide thin films
Physical chemistry, chemical physics : PCCP 19, 11483-12100 () [10.1039/D6CP00050A]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;
Enhanced resistive switching uniformity in tantalum oxide memristor devices via copper implantation
Advanced electronic materials () [10.1002/aelm.202600002]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis/Book  ;  ;
Model perovskite oxide electrocatalysts for the oxygen evolution reaction and their material sustainability evaluation
Jülich : Forschungszentrum Jülich GmbH, Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Energie & Umwelt 688, vi, 174 Seiten : Illustrationen () [10.18154/RWTH-2026-03260] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2025  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
Current Compliance-Driven Morphological Evolution of Conductive Filaments in ECM Cells: Mechanisms, Switching Regimes, and Thermal Effects
Advanced Materials Technologies 11(1), e00837 () [10.1002/admt.202500837]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;
SrCoO3-δ and SrCo1-xTixO3-δ perovskites as electrocatalytic materials for oxygen evolution reaction in alkaline environment
Materials chemistry and physics 348, 131713 () [10.1016/j.matchemphys.2025.131713]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;
Effect of Pulse Schemes on Multi-Level Switching and Short-Term Instability in 1T1r Configuration
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12
[Piscataway, NJ] : IEEE 3 Seiten () [10.1109/EDTM61175.2025.11040914]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;
HRS Retention of 28 nm BEOL Integrated ReRAM
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12
[Piscataway, NJ] : IEEE 3 Seiten () [10.1109/EDTM61175.2025.11040220]  GO BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 


 Record created 2014-07-16, last modified 2020-01-21



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