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QUEFORMAL

Quantum Engineering for Machine Learning

CoordinatorBundeswehr University Munich ; QUANTAVIS SRL ; National Research Council ; University of Pisa ; École Polytechnique Fédérale de Lausanne ; GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH
Grant period2019-01-01 - 2022-12-31
Funding bodyEuropean Union
Call numberH2020-FETOPEN-2018-2019-2020-01
Grant number829035
IdentifierG:(EU-Grant)829035

Note: We propose the radical vision of a new integrated circuit technology for machine learning where low-voltage field-effect transistors and non-volatile memories are integrated next to each other exploiting quantum engineering of heterostructures of two-dimensional materials (2DMs), i.e. the atom-by-atom design and fabrication of devices which combine vertical and lateral heterostructures (VH and LH, respectively) of 2DMs. QUEFORMAL pursues a very risky and original proposed solution, with the extremely high potential gain of advancing a science-enabled technology for the fabrication of integrated circuits for machine learning, in a field in which Europe has a strong basic-science leadership, thanks to the pioneering breakthroughs on graphene and 2D materials. The overall objective and targeted breakthrough of QUEFORMAL is to experimentally demonstrate the fabrication and operation of devices based on LH and VH of 2DMs for logic-in-memory integrated circuits and to show the potential of this technology for the fabrication of integrated circuits for machine learning. Devices include i) lateral heterostructure FETs (LH-FETs) operating at low voltage (0.6 V) fabricated in close vicinity to ii) floating-gate non-volatile memories based on VHs for the gate stack and LHs for the channel (LVH-NVMs), that can be programmed at low voltage (<5 V) with retention time larger than 1 month. The QUEFORMAL consortium consists of six partners and has unique advantages: Consortium members have proposed and patented the LH-FET concept and have experimentally demonstrated the floating gate non-volatile memory concept using 2D materials.
     

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors
npj 2D materials and applications 8(1), 35 () [10.1038/s41699-024-00471-y]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
Flexible two‑dimensional/three‑dimensional material based photodetectors
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen, Diagramme () [10.18154/RWTH-2022-09676] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors
2022 Device Research Conference (DRC) : 26-29 June 2022
2022 Device Research Conference, DRC 2022, Columbus, OHColumbus, OH, USA, 26 Jun 2022 - 29 Jun 20222022-06-262022-06-29 [Piscataway, NJ] : IEEE 2 Seiten () [10.1109/DRC55272.2022.9855787]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates
2022 Device Research Conference (DRC) : 26-29 June 2022
80. Device Research Conference, DRC 2022, Columbus, OHColumbus, OH, USA, 26 Jun 2022 - 29 Jun 20222022-06-262022-06-29 [Piscataway, NJ] : IEEE 2 Seiten () [10.1109/DRC55272.2022.9855791]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
How to report and benchmark emerging field-effect transistors
Nature electronics 5(7), 416-423 () [10.1038/s41928-022-00798-8]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
2D materials for future heterogeneous electronics
Nature Communications 13, 1392 () [10.1038/s41467-022-29001-4]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Abstract/Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
2021 Silicon Nanoelectronics Workshop : June 13, 2021, all virtual, Japan : workshop abstracts / 2021 VLSI Technology Symposium Kyoto, [the Japan Society of Applied Physics], Electron Devices Society
26. Silicon Nanoelectronics Workshop, SNW 2021, onlineonline, 13 Jun 2021 - 13 Jun 20212021-06-132021-06-13 [Piscataway, NJ] : IEEE S7-6, 79-80 () [10.18154/RWTH-2021-11092]  GO OpenAccess  Download fulltext Files  Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation
2021 Device Research Conference (DRC) : 20-23 June 2021
79. Device Research Conference, DRC 2021, onlineonline, 20 Jun 2021 - 23 Jun 20212021-06-202021-06-23 [Piscataway, NJ] : IEEE 2 Seiten () [10.1109/DRC52342.2021.9467236]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
MoS2 /graphene Lateral Heterostructure Field Effect Transistors
2021 Device Research Conference (DRC) : 20-23 June 2021
79. Device Research Conference, DRC 2021, onlineonline, 20 Jun 2021 - 23 Jun 20212021-06-202021-06-23 [Piscataway, NJ] : IEEE 2 Seiten () [10.1109/DRC52342.2021.9467156]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis  ;  ;
Two dimensional materials-based vertical heterojunction devices for electronics, optoelectronics and neuromorphic applications
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen () [10.18154/RWTH-2021-09736] = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 

 Record created 2020-01-11, last modified 2023-02-15
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