Evaluation of Single Event Upset Susceptibility of FinFET-based SRAMs with Weak Resistive Defects

Copetti, Thiago; Taouil, Mottaqiallah; Bolzani Poehls, Letícia; Balen, Tiago; Cardoso Medeiros, Guilherme; Hamdioui, Said

doi:WOS:000656823500001

Evaluation of Single Event Upset Susceptibility of FinFET-based SRAMs with Weak Resistive Defects

Copetti, Thiago (Corresponding author)^RWTH* ; Cardoso Medeiros, Guilherme ; Taouil, Mottaqiallah ; Hamdioui, Said ; Bolzani Poehls, Letícia^RWTH* ; Balen, Tiago

In
Journal of electronic testing 37(3), Seiten/Artikel-Nr.:383-394

2021

ImpressumDordrecht [u.a.] : Springer Science + Business Media B.V.

ISSN1573-0727

Online
DOI: 10.18154/RWTH-2021-05400
DOI: 10.1007/s10836-021-05949-x
10.1007/s10836-021-05949-x
URL: https://publications.rwth-aachen.de/record/820083/files/820083.pdf

Einrichtungen

Lehrstuhl für Integrierte digitale Systeme und Schaltungsentwurf (611110)

Thematische Einordnung (Klassifikation)
DDC: 670

OpenAccess:
PDF

Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85107327831
WOS Core Collection: WOS:000656823500001
OpenAlex: W3171214088

Interne Identnummern
RWTH-2021-05400
Datensatz-ID: 820083

Beteiligte Länder
Brazil, Germany, Netherlands

Lizenzstatus der Zeitschrift

;

; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; DEAL Springer ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz