Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source : Application to β-Ga2O3 editors-pick

Ardenghi, A.; Mazzolini, P.; Martin, Manfred; Lähnemann, J.; Falkenstein, Andreas; Hoffmann, G.; Bierwagen, O.

doi:10.18154/RWTH-2023-00232

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source : Application to β-Ga2O3 editors-pick

Ardenghi, A. (Corresponding author) ; Bierwagen, O. (Corresponding author) ; Falkenstein, Andreas^RWTH* ; Hoffmann, G. ; Lähnemann, J. ; Martin, Manfred^RWTH* ; Mazzolini, P.

In
Applied physics letters 121(4), Seiten/Artikel-Nr.:042109

2022

ImpressumMelville, NY : American Inst. of Physics

Umfang1-7

ISSN0003-6951

Online
DOI: 10.1063/5.0087987
10.1063/5.0087987
DOI: 10.18154/RWTH-2023-00232
URL: https://publications.rwth-aachen.de/record/861790/files/861790.pdf

Einrichtungen

Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
PDF

Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85135301995
WOS Core Collection: WOS:000886462500002

Interne Identnummern
RWTH-2023-00232
Datensatz-ID: 861790

Beteiligte Länder
Germany, Italy

Lizenzstatus der Zeitschrift

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