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Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics : Part II: Theory
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In
IEEE transactions on electron devices : ED 66(1), Seiten/Artikel-Nr.:241-248
2019 & 2018
Date of Publication: 08 November 2018
Online
DOI: 10.1109/TED.2018.2873421
DOI: 10.18154/RWTH-2019-00322
URL: http://publications.rwth-aachen.de/record/752987/files/752987.pdf
Einrichtungen
Thematische Einordnung (Klassifikation)
DDC: 620
OpenAccess: 
PDF
Dokumenttyp
Journal Article
Format
online, print
Sprache
English
Anmerkung
Peer reviewed article
Externe Identnummern
WOS Core Collection: WOS:000454333500030
SCOPUS: SCOPUS:2-s2.0-85056314096
Interne Identnummern
RWTH-2019-00322
Datensatz-ID: 752987
Beteiligte Länder
Austria, Belgium, Germany, Russia
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