Record #1012649 - RWTH Publications

BMFTR 03ZU2106AA

NeuroSys: KI-anwendungsspezifische Technologiereifung memristiver Bauteile (Projekt A) - Teilvorhaben A

Grant period	2025-01-01 - 2027-12-31
Funding body	Bundesministerium für Forschung, Technologie und Raumfahrt
	BMFTR
Further information:	Homepage
Identifier	G:(BMBF)03ZU2106AA

Recent Publications

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Journal Article Fa, Y.RWTH* ; Buttberg, M.RWTH* ; Ran, K.RWTH* ; Ahmad, R. W.RWTH* ; Braun, D.RWTH* ; Völkel, L.RWTH* ; Lee, J.RWTH* ; Cruces, S.RWTH* ; Macco, B. ; Canto, B. ; Lerch, H. ; Wahlbrink, T. ; Kalisch, H.RWTH* ; Heuken, M.RWTH* ; Vescan, A.RWTH* ; Mayer, J.RWTH* ; Wang, Z. ; Valov, I.RWTH* ; Menzel, S.RWTH* ; Lemme, M. C. (Corresponding author)RWTH*
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials e26682 (2025) [10.1002/adfm.202526682]2025 OpenAccess Files BibTeX | EndNote: XML, Text | RIS

Preprint Rademacher, N. ; Völkel, L.RWTH* ; Reato, E.RWTH* ; Otto, M. ; Krotkus, S. ; Mischke, J. ; Yengel, E. ; Mauder, C. ; Henning, A. ; Heuken, M. ; Ran, K. ; Mayer, J.RWTH* ; Lemme, M. C. (Corresponding author)RWTH*
Water-based, large-scale transfer of 2D materials grown on sapphire substrates
18 Seiten (2025) [10.21203/rs.3.rs-7544328/v1]2025 OpenAccess Files BibTeX | EndNote: XML, Text | RIS

Abstract/Contribution to a book/Contribution to a conference proceedings Fa, Y. ; Braun, D. ; Völkel, L.RWTH* ; Lerch, H. ; Kalisch, H.RWTH* ; Heuken, M. ; Vescan, A.RWTH* ; Wang, Z. ; Lemme, M. C.RWTH*
Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
20252025 Silicon Nanoelectronics Workshop : June 8-9, 2025, Rihga Royal Hotel Kyoto, Kyoto, Japan : workshop abstracts / AP, [the Japan Society of Applied Physics], Electron Devices Society ; general chair: Kuniyuki Kakushima (Institute of Science Tokyo)
2025 Silicon Nanoelectronics Workshop, SNW, KyotoKyoto, Japan, 8 Jun 2025 - 9 Jun 20252025-06-082025-06-09 [Piscataway, NJ] : IEEE 80-81 (2025) [10.23919/SNW65111.2025.11097209]2025 BibTeX | EndNote: XML, Text | RIS

Contribution to a book/Contribution to a conference proceedings Lemme, M. C.RWTH* ; Völkel, L.RWTH* ; Cruces, S. ; Lee, J. ; Fa, Y.
2D Materials for Neuromorphic Computing Devices
2025Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12 [Piscataway, NJ] : IEEE (2025) [10.1109/EDTM61175.2025.11041583]2025 BibTeX | EndNote: XML, Text | RIS