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High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

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In
Applied physics letters 127(8), Seiten/Artikel-Nr.:083503

ImpressumMelville, NY : American Inst. of Physics

Umfang1-6

ISSN1077-3118

Online
DOI: 10.1063/5.0285958


Einrichtungen

  1. Lehrstuhl für Experimentalphysik und II. Physikalisches Institut (132210)
  2. Fachgruppe Physik (130000)
  3. JARA-Institut für Quanteninformation (080043)


Thematische Einordnung (Klassifikation)
DDC: 530


Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105014120909
WOS Core Collection: WOS:001559365200008
OpenAlex: W4413640748

Interne Identnummern
RWTH-2026-04602
Datensatz-ID: 1034271

Beteiligte Länder
Germany, Italy

Lizenzstatus der Zeitschrift

 GO

Medline ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Mathematics and Natural Sciences (Fac.1) > Department of Physics
Central and Other Institutions
Public records
Publications database
080043
130000
132210
 Record created 2026-04-28, last modified 2026-07-09
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