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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates

; ; ; ; ; ; ; ;

In
Semiconductor science and technology 40(5), Seiten/Artikel-Nr.:055003

ImpressumBristol : IOP Publ.

Umfang1-7

ISSN1361-6641

Online
DOI: 10.1088/1361-6641/adc9db

DOI: 10.18154/RWTH-2026-07328
URL: https://publications.rwth-aachen.de/record/1039605/files/1039605.pdf

Einrichtungen

  1. Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik (616210)
  2. JARA-Institut FIT Green IT (080044)


Thematische Einordnung (Klassifikation)
DDC: 620

OpenAccess:
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Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105003232943
WOS Core Collection: WOS:001468688400001
OpenAlex: W4409232682

Interne Identnummern
RWTH-2026-07328
Datensatz-ID: 1039605

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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Faculty of Electrical Engineering and Information Technology (Fac.6)
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080044
616210
 Record created 2026-07-30, last modified 2026-08-01
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