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⇧ RWTH Aachen ⇧

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Kazantsev, V. (Corresponding author)RWTH* ; Müller, M. ; Leenders, H. C. A.RWTH* ; Faißt, J.RWTH* ; Jin, X. ; Hamzeloui, S. ; Bolognesi, C. R. ; Jungemann, C. ; Schröter, M.
Analysis of Multivalley Phenomena in InP/GaAsSb DHBTs Using the Boltzmann Transport Equation
IEEE transactions on electron devices : ED (2025) [10.1109/TED.2025.3563813]2025   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Heimerl, J. P. (Corresponding author) ; Lee, H. P. ; Jungemann, C.RWTH* ; Cressler, J. D.
Revisiting the Vertical Superjunction in SiGe HBT Performance Optimization
IEEE transactions on electron devices : ED 72(3), 1523-1527 (2025) [10.1109/TED.2025.3535461]2025   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Dissertation / PhD Thesis Chen, C.-J.RWTH* ; Jungemann, C. (Thesis advisor)RWTH* ; Waser, R. (Thesis advisor)RWTH*
Modeling the spatio-temporal evolution of oxygen vacancies in valence change memory cells
Aachen : RWTH Aachen University 1 Online-Ressource : Illustrationen (2024) [10.18154/RWTH-2024-10672]2024 = Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2024     Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Jungemann, C.RWTH* ; Richstein, B.RWTH* ; Linn, T. S.RWTH* ; Knoch, J.RWTH*
Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
IEEE transactions on electron devices : ED 71(4), 2322-2328 (2024) [10.1109/TED.2024.3361410]2024   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Leenders, H. C. A. (Corresponding author)RWTH* ; Luckner, P. ; Linn, T. S.RWTH* ; Jungemann, C.RWTH*
A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space
Journal of computational electronics 23(1), 1-11 (2024) [10.1007/s10825-023-02125-6]2024     Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article/Contribution to a book Chen, C.-J. (Corresponding author)RWTH* ; Rushchanskii, K. Z. (Corresponding author)RWTH* ; Jungemann, C.RWTH*
Investigation of the Large Variability of HfO2-Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model
Physica status solidi / A 221(22), 2300403 (2023) [10.1002/pssa.202300403] special issue: "Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics / Issue Edited by: Matthias Wuttig, Regina Dittmann, Rainer"2023     Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings Knoch, J. (Corresponding author)RWTH* ; Richstein, B.RWTH* ; Han, Y. ; Jungemann, C.RWTH* ; Icking, E. T.RWTH* ; Schreiber, L. R.RWTH* ; Xue, R.RWTH* ; Tu, J.-S. ; Gökcel, T.RWTH* ; Neugebauer, J.RWTH* ; Stampfer, C.RWTH* ; Zhao, Q. T.
On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors
20232023 IEEE Nanotechnology Materials and Devices Conference (NMDC) : 22-25 Oct. 2023
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC, PaestumPaestum, Italy, 22 Oct 2023 - 25 Oct 20232023-10-222023-10-25 [Piscataway, NJ] : IEEE 440-445 (2023) [10.1109/NMDC57951.2023.10343713]2023   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings Linn, T. S.RWTH* ; Flasskamp, J.RWTH* ; Jungemann, C.RWTH*
Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics
20232023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : SISPAD 2023 : September 27-29, 2023, Kobe Chamber of Commerce and Industry, Kobe, Japan / conference chair: S. Souma (Kobe Univ.) ; publication: Y. Kamakura (Osaka Inst. Technol.)
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, KobeKobe, Japan, 27 Sep 2023 - 29 Sep 20232023-09-272023-09-29 [Piscataway, NJ] : IEEE 265-268 (2023) [10.23919/SISPAD57422.2023.10319606]2023   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings Renner, M.RWTH* ; Linn, T. S.RWTH* ; Jungemann, C.RWTH*
An Accurate k*p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs
20232023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : SISPAD 2023 : September 27-29, 2023, Kobe Chamber of Commerce and Industry, Kobe, Japan / conference chair: S. Souma (Kobe Univ.) ; publication: Y. Kamakura (Osaka Inst. Technol.)
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, KobeKobe, Japan, 27 Sep 2023 - 29 Sep 20232023-09-272023-09-29 [Piscataway, NJ] : IEEE 269-272 (2023) [10.23919/SISPAD57422.2023.10319613]2023   BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Meng, F. (Corresponding author) ; Walla, F. ; Kovalev, S. ; Deinert, J.-C. ; Ilyakov, I. ; Chen, M. ; Ponomaryov, A. ; Pavlov, S. G. ; Hübers, H.-W. ; Abrosimov, N. V. ; Jungemann, C. (Corresponding author)RWTH* ; Roskos, H. G. (Corresponding author) ; Thomson, M. D. (Corresponding author)
Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
Physical review research 5(4), 043141 (2023) [10.1103/PhysRevResearch.5.043141]2023     Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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