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Electrostatic Doping : Controlling the Properties of Carbon-Based FETs With Gates

;

In
IEEE nanotechnology magazine 13(6), Seiten/Artikel-Nr.:1044-1052

ImpressumNew York, NY : IEEE

ISSN1536-125X

Online
DOI: 10.1109/TNANO.2014.2323436


Einrichtungen

  1. Lehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik (616210)



Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
INSPEC: 14720711
SCOPUS: SCOPUS:2-s2.0-84910602613
WOS Core Collection: WOS:000345087900005

Interne Identnummern
RWTH-CONV-090710
Datensatz-ID: 460548

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Public records
Publications database
616210
 Record created 2015-01-09, last modified 2022-08-24
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