Reducing the Impact of Bulk Doping on Transport Properties of Bi-Based 3D Topological Insulators

Jafarpisheh, Shaham; Beschoten, Bernd; Watanabe, Kenji; Ju, An; Stampfer, Christoph; Taniguchi, Takashi; Janßen, Kevin

doi:1521-3951

Reducing the Impact of Bulk Doping on Transport Properties of Bi-Based 3D Topological Insulators

Jafarpisheh, Shaham^RWTH* ; Ju, An^RWTH* ; Janßen, Kevin^RWTH* ; Taniguchi, Takashi ; Watanabe, Kenji ; Stampfer, Christoph^RWTH* ; Beschoten, Bernd (Corresponding author)^RWTH*

In
Special Issue: Topological Insulators: Materials – Fundamental Properties – Devices / Issue Edited by: Oliver Rader, Gustav Bihlmayer, Saskia F. Fischer

In
Physica status solidi / B 258(1), Seiten/Artikel-Nr.:2000021

2021 & 2020

ImpressumWeinheim : Wiley-VCH

Umfang1-7

ISSN1521-3951

First published: 03 March 2020

Online
DOI: 10.1002/pssb.202000021
10.1002/pssb.202000021
DOI: 10.18154/RWTH-2020-04266
URL: https://publications.rwth-aachen.de/record/787776/files/787776.pdf

Einrichtungen

Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
PDF

Dokumenttyp
Journal Article/Contribution to a book

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85082133663
WOS Core Collection: WOS:000564225300001

Interne Identnummern
RWTH-2020-04266
Datensatz-ID: 787776

Beteiligte Länder
Germany, Japan

Lizenzstatus der Zeitschrift

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