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Toward an In-Depth Understanding of the Commutation Processes in a SiC mosfet Switching Cell Including Parasitic Elements

; ; ; ; ;

In
IEEE transactions on industry applications : IA 56(4), Seiten/Artikel-Nr.:4089-4101

ImpressumNew York, NY : IEEE

ISSN1939-9367

Online
DOI: 10.1109/TIA.2020.2995331

DOI: 10.18154/RWTH-2020-08155
URL: https://publications.rwth-aachen.de/record/795187/files/795187.pdf

Einrichtungen

  1. Lehrstuhl und Institut für Stromrichtertechnik und Elektrische Antriebe (614510)
  2. Institut für Stromrichtertechnik und Elektrische Antriebe (614500)


Thematische Einordnung (Klassifikation)
DDC: 330

OpenAccess:
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Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
WOS Core Collection: WOS:000552178300002
SCOPUS: SCOPUS:2-s2.0-85089354881

Interne Identnummern
RWTH-2020-08155
Datensatz-ID: 795187

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Science Citation Index Expanded ; Web of Science Core Collection
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614500
614510
 Record created 2020-08-06, last modified 2023-05-06
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