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Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In-Memory Computing

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In
Advanced electronic materials 8(10), Seiten/Artikel-Nr.:2200448

ImpressumWeinheim : Wiley-VCH Verlag GmbH & Co. KG

Umfang1-14

ISSN2199-160X

First published: 10 July 2022

Online
DOI: 10.18154/RWTH-2022-07329
DOI: 10.1002/aelm.202200448

URL: https://publications.rwth-aachen.de/record/850200/files/850200.pdf

Einrichtungen

  1. Lehr- und Forschungsgebiet Technologie der Oxidelektronik (FZ Jülich) (618420)
  2. JARA-FIT (080009)


Thematische Einordnung (Klassifikation)
DDC: 621.3

OpenAccess:
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Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85133573808
WOS Core Collection: WOS:000822534500001

Interne Identnummern
RWTH-2022-07329
Datensatz-ID: 850200

Beteiligte Länder
Germany, Switzerland

Lizenzstatus der Zeitschrift

 GO


Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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080009
618420

 Record created 2022-07-25, last modified 2022-10-21


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