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Physical Origin of Threshold Switching in Amorphous Chromium-Doped V2O3

; ; ; ; ; ;

In
Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics / Issue Edited by: Matthias Wuttig, Regina Dittmann, Rainer

In
Physica status solidi / A 221(22), Seiten/Artikel-Nr.:2300405

ImpressumWeinheim : Wiley-VCH

Umfang1-9

ISSN1862-6300

First published: 15 November 2023

Online
DOI: 10.18154/RWTH-2024-05838
DOI: 10.1002/pssa.202300405

URL: https://publications.rwth-aachen.de/record/987796/files/987796.pdf

Einrichtungen

  1. Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik (611610)

Projekte

  1. OA - Open Access Publikation mit Unterstützung der Universitätsbibliothek der RWTH Aachen University (X021000-OA) (X021000-OA)
  2. DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)

Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
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Dokumenttyp
Journal Article/Contribution to a book

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85178493842
WOS Core Collection: WOS:001114366200001

Interne Identnummern
RWTH-2024-05838
Datensatz-ID: 987796

Beteiligte Länder
Germany, USA

 GO


Related:

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Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics
Physica status solidi / A 221(22), ()  GO   Download fulltextFulltext BibTeX | EndNote: XML, Text | RIS


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 Record created 2024-06-14, last modified 2025-05-14


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