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ENERGIZE

Energy-efficient Neuromorphic 2D Devices and Circuits for Edge AI Computing

Grant period2024-10-01 - 2027-09-30
Funding bodyEuropean Union
 CORDIS
Call numberHORIZON-JU-Chips-2024-3-RIA
Grant number101194458
IdentifierG:(EU-Grant)101194458

Note: An AI approach to sustainable low-power computing. The growing demand for AI is leading to increased energy consumption, which poses significant environmental challenges. Traditional computing architectures can consume large amounts of power. Hence, there is a need for more sustainable alternatives that can handle AI tasks without compromising performance. This is essential for a future where technology and the environment coexist harmoniously. With this in mind, the EU-funded ENERGIZE project will create neuromorphic hardware using 2D materials to make AI more energy-efficient and seek to improve artificial neural networks. ENERGIZE will also enhance chiplet-based in-memory computing, allowing for more efficient processing. Through collaboration between European and Korean researchers, ENERGIZE will transform the landscape of low-power edge computing while promoting AI development.
   

Recent Publications

All known publications ...
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Water-based, large-scale transfer of 2D materials grown on sapphire substrates
npj 2D materials and applications 10(1), 48 () [10.1038/s41699-026-00696-z]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS$_2$ Memristors
Advanced electronic materials e00017 () [10.1002/aelm.202600017]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;
Reduced variability in threshold switches using heterostructures of siox and vertically aligned mos2
Advanced electronic materials 12(7), e00800 () [10.1002/aelm.202500800]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips
Advanced functional materials e27644 () [10.1002/adfm.202527644]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials e26682 () [10.1002/adfm.202526682]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Preprint  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Water-based, large-scale transfer of 2D materials grown on sapphire substrates
18 Seiten () [10.21203/rs.3.rs-7544328/v1]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Abstract/Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;  ;
Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
2025 Silicon Nanoelectronics Workshop : June 8-9, 2025, Rihga Royal Hotel Kyoto, Kyoto, Japan : workshop abstracts / AP, [the Japan Society of Applied Physics], Electron Devices Society ; general chair: Kuniyuki Kakushima (Institute of Science Tokyo)
2025 Silicon Nanoelectronics Workshop, SNW, KyotoKyoto, Japan, 8 Jun 2025 - 9 Jun 20252025-06-082025-06-09 [Piscataway, NJ] : IEEE 80-81 () [10.23919/SNW65111.2025.11097209]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;  ;  ;  ;
Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12 [Piscataway, NJ] : IEEE () [10.1109/EDTM61175.2025.11041161]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book/Contribution to a conference proceedings  ;  ;  ;  ;
2D Materials for Neuromorphic Computing Devices
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 20252025-03-092025-03-12 [Piscataway, NJ] : IEEE () [10.1109/EDTM61175.2025.11041583]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
npj 2D materials and applications 9(1), 86 () [10.1038/s41699-025-00614-9]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
Download: BibTeX | EndNote XML,  Text | RIS | 

 Record created 2025-06-04, last modified 2025-06-06
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