Improved thermal stability of NbCoSn half-Heusler compounds via Sb doping-induced complementary point defect evolution

Jang, Kyuseon; Jung, Chanwon; Park, Hail; Dey, Poulumi; Scheu, Christina; Berkels, Benjamin; Villoro, Ruben Bueno; Han, Jeong Woo; Kim, Bongseo; Jang, Hanhwi; Choi, Pyuck-Pa; Jang, Jeong-In; Jung, Yeon Sik; Dutta, Biswanath; Oh, Min-Wook; Bhat, Mohammed Kamran; Kim, Hyungsub; Zhang, Siyuan; Son, Ji-Hee; Choi, Jungwoo

doi:WOS:001513881700021

Improved thermal stability of NbCoSn half-Heusler compounds via Sb doping-induced complementary point defect evolution

Jang, Kyuseon ; Dey, Poulumi ; Dutta, Biswanath ; Park, Hail ; Son, Ji-Hee ; Jang, Jeong-In ; Bhat, Mohammed Kamran ; Jang, Hanhwi ; Kim, Hyungsub ; Choi, Jungwoo ; Zhang, Siyuan ; Villoro, Ruben Bueno ; Berkels, Benjamin^RWTH* ; Kim, Bongseo ; Choi, Pyuck-Pa ; Oh, Min-Wook ; Jung, Yeon Sik ; Han, Jeong Woo ; Scheu, Christina (Corresponding author) ; Jung, Chanwon (Corresponding author)

In
The chemical engineering journal 518, Seiten/Artikel-Nr.:164845

2025

ImpressumAmsterdam : Elsevier

ISSN1385-8947

Online
DOI: 10.1016/j.cej.2025.164845
10.1016/j.cej.2025.164845

Einrichtungen

Projekte

Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105007981907
WOS Core Collection: WOS:001513881700021

Interne Identnummern
RWTH-2025-05830
Datensatz-ID: 1013965

Beteiligte Länder
Germany, Netherlands, South Korea

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Improved thermal stability of NbCoSn half-Heusler compounds via Sb doping-induced complementary point defect evolution

RWTH

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