BMBF 03ZU1106AA
NeuroSys: Memristor Crossbar Architekturen (Projekt A) - A
| Grant period | 2022-01-01 - 2024-12-31 |
| Funding body | Bundesministerium für Bildung und Forschung |
| BMBF | |
| Identifier | G:(BMBF)03ZU1106AA |
All known publications ...
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Journal Article
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors
Advanced electronic materials e00017 (2026) [10.1002/aelm.202600017]
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Journal Article
Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips
Advanced functional materials e27644 (2026) [10.1002/adfm.202527644]
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Journal Article
Water-assisted multistep MOCVD for wafer-scale layer-by-layer growth of WSe2
MRS bulletin 50(11), 1283-1295 (2025) [10.1557/s43577-025-00948-1]
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Journal Article
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials e26682 (2025) [10.1002/adfm.202526682]
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Abstract/Contribution to a book/Contribution to a conference proceedings
Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
2025 Silicon Nanoelectronics Workshop : June 8-9, 2025, Rihga Royal Hotel Kyoto, Kyoto, Japan : workshop abstracts / AP, [the Japan Society of Applied Physics], Electron Devices Society ; general chair: Kuniyuki Kakushima (Institute of Science Tokyo)
2025 Silicon Nanoelectronics Workshop, SNW, KyotoKyoto, Japan, 8 Jun 2025 - 9 Jun 2025
[Piscataway, NJ] : IEEE 80-81 (2025) [10.23919/SNW65111.2025.11097209]
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Contribution to a book/Contribution to a conference proceedings
Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
[Piscataway, NJ] : IEEE (2025) [10.1109/EDTM61175.2025.11041161]
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Contribution to a book/Contribution to a conference proceedings
2D Materials for Neuromorphic Computing Devices
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society
9. IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2025, Hong KongHong Kong, Hong Kong, 9 Mar 2025 - 12 Mar 2025
[Piscataway, NJ] : IEEE (2025) [10.1109/EDTM61175.2025.11041583]
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Journal Article
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
npj 2D materials and applications 9(1), 86 (2025) [10.1038/s41699-025-00614-9]
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Journal Article
Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach
Advanced materials interfaces 12(22), e00349 (2025) [10.1002/admi.202500349]
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Journal Article
Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy
Nature Communications 16, 7433 (2025) [10.1038/s41467-025-62592-2]
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All known publications ...
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