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Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth
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In
Special Issue on Solid State Devices and Materials 2023 (SSDM2023)
In
Japanese journal of applied physics 63(2), Seiten/Artikel-Nr.:02SP53
2024
Online
DOI: 10.35848/1347-4065/ad189d
DOI: 10.18154/RWTH-2024-00914
URL: https://publications.rwth-aachen.de/record/977811/files/977811.pdf
Einrichtungen
Thematische Einordnung (Klassifikation)
DDC: 530
OpenAccess: 
PDF
Dokumenttyp
Journal Article/Contribution to a conference proceedings
Format
online, print
Sprache
English
Anmerkung
Peer reviewed article
Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85182746291
WOS Core Collection: WOS:001143752700001
Interne Identnummern
RWTH-2024-00914
Datensatz-ID: 977811
Beteiligte Länder
Belgium, Germany, Japan
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; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
PDF