h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

Exploiting Read Noise of Filamentary VCM ReRAM for Robust TRNG

; ; ; ; ; ; ; ; ; ;

In
IEEE transactions on electron devices : ED

ImpressumNew York, NY : IEEE

Umfang1-7

ISSN1557-9646

Date of Publication: 25 September 2025

Online
DOI: 10.1109/TED.2025.3611916


Einrichtungen

  1. JARA-FIT (080009)
  2. Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik (611610)


Thematische Einordnung (Klassifikation)
DDC: 620


Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105017283467
WOS Core Collection: WOS:001582387200001

Interne Identnummern
RWTH-2025-08527
Datensatz-ID: 1019771

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Central and Other Institutions
Public records
Publications database
080009
611610
 Record created 2025-10-13, last modified 2025-10-14
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)