612020
Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter| ID | I:(DE-82)612020_20140620 |
All known publications ...
Download: BibTeX | EndNote XML, Text | RIS |
Journal Article
Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach
Advanced materials interfaces (2025) [10.1002/admi.202500349]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article (Letter)
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
Nano letters 25(33), 12455-12462 (2025) [10.1021/acs.nanolett.5c01992]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article (Erratum/Correction)
Correction: Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications
Journal of materials research : JMR 40(13), 2037-2037 (2025) [10.1557/s43578-025-01626-3]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article
Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM Open Access
APL materials 13(4), 041112 (2025) [10.1063/5.0248519]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article
Critical impact of source/drain surface modification treatment on the performance of 4h-21dntt otft
ACS applied electronic materials 7(6), 2583-2592 (2025) [10.1021/acsaelm.5c00043]
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article
Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
ACS applied materials & interfaces 17(16), 24526-24534 (2025) [10.1021/acsami.4c21596]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article (Letter)
Improved Reliability of 2D-TMDC Dry Transfer via PMMA and Target Substrate Treatments
ACS applied electronic materials 7(6), 2394-2403 (2025) [10.1021/acsaelm.4c02168]
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article
Investigation and Reduction of Surface Damage of Etched Quasi-Vertical Gallium Nitride Schottky Diodes
Physica status solidi / A 222(11), 2400880 (2025) [10.1002/pssa.202400880]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article (Letter)
Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases
IEEE transactions on electron devices 72(3), 1131-1140 (2025) [10.1109/TED.2025.3534174]
BibTeX |
EndNote:
XML,
Text |
RIS
Journal Article
Volatile mos2 memristors with lateral silver ion migration for artificial neuron applications
Small science 5(5), 2400523 (2025) [10.1002/smsc.202400523]
Files
BibTeX |
EndNote:
XML,
Text |
RIS
All known publications ...
Download: BibTeX | EndNote XML, Text | RIS |