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Nanometer lithography for III-V semiconductor wires using chloromethylated poly-* methylstrene resist

; ; ; ; ;

In
Journal of vacuum science & technology : JVST / B 6, Seiten/Artikel-Nr.:2308-2311

ImpressumNew York, NY : American Institute of Physics

ISSN0734-211x

Einrichtungen

  1. Lehr- und Forschungsgebiet Halbleitertechnologie (ama216)
  2. Lehrstuhl und Institut für Halbleitertechnik (616210)



Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Interne Identnummern
RWTH-CONV-051561
Datensatz-ID: 174317

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The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Public records
Publications database
616210

 Record created 2013-01-28, last modified 2017-06-20



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