h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/OffRatio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

; ; ;

In
2021 IEEE International Memory Workshop (IMW) : proceedings : 16-19 May 2021 / International Memory Workshop ; IEEE, Seiten/Artikel-Nr: 115-118

Konferenz/Event:2021 IEEE International Memory Workshop (IMW) , Dresden , Germany , IMW 2021 , 2021-05-16 - 2021-05-19

ImpressumPiscataway, NJ : IEEE

Umfang115-118

ISBN978-1-7281-8517-0, 978-1-7281-8518-7

Online
DOI: 10.1109/IMW51353.2021.9439601


Einrichtungen

  1. Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik (611610)
  2. JARA-FIT (080009)



Dokumenttyp
Contribution to a book/Contribution to a conference proceedings

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85107671290
WOS Core Collection: WOS:000681328500030
OpenAlex: W3169213567

Interne Identnummern
RWTH-2021-07895
Datensatz-ID: 824864

Beteiligte Länder
Germany

 GO

QR Code for this record

The record appears in these collections:
Document types > Events > Contributions to a conference proceedings
Document types > Books > Contributions to a book
Faculty of Electrical Engineering and Information Technology (Fac.6)
Central and Other Institutions
Public records
Publications database
080009
611610
 Record created 2021-08-16, last modified 2026-09-10
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)