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2D-EPL

Graphene Flagship 2D Experimental Pilot Line

Grant period2020-10-01 - 2024-09-30
Funding bodyEuropean Union
Call numberH2020-SGA-FET-GRAPHENE-2-2019
Grant number952792
IdentifierG:(EU-Grant)952792

Note: The 2D Experimental Pilot Line (2D-EPL) project will establish a European ecosystem for prototype production of Graphene and Related Materials (GRM) based electronics, photonics and sensors. The project will cover the whole value chain including tool manufacturers, chemical and material providers and pilot lines to offer prototyping services to companies, research centers and academics. The 2D-EPL targets to the adoption of GRM integration by commercial semiconductor foundries and integrated device manufacturers through technology transfer and licensing. The project is built on two pillars. In Pillar 1, the 2D-EPL will offer prototyping services for 150 and 200 mm wafers, based on the current state of the art graphene device manufacturing and integration techniques. This will ensure external users and customers are served by the 2D-EPL early in the project and guarantees the inclusion of their input in the development of the final processes by providing the specifications on required device layouts, materials and device performances. In Pillar 2, the consortium will develop a fully automated process flow on 200 and 300 mm wafers, including the growth and vacuum transfer of single crystalline graphene and TMDCs. The knowledge gained in Pillar 2 will be transferred to Pillar 1 to continuously improve the baseline process provided by the 2D-EPL. To ensure sustainability of the 2D-EPL service after the project duration, integration with EUROPRACTICE consortium will be prepared. It provides for the European actors a platform to develop smart integrated systems, from advanced prototype design to small volume production. In addition, for the efficiency of the industrial exploitation, an Industrial Advisory Board consisting mainly of leading European semiconductor manufacturers and foundries will closely track and advise the progress of the 2D-EPL. This approach will enable European players to take the lead in this emerging field of technology.
   

Recent Publications

All known publications ...
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Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing
Scientific reports 15(1), 14706 () [10.1038/s41598-025-96207-z]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Multi-project wafer runs for electronic graphene devices in the European 2D-Experimental Pilot Line project
Nature Communications 16, 1417 () [10.1038/s41467-025-56357-0]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
npj 2D materials and applications 8, 23 () [10.1038/s41699-024-00461-0]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Graphene Thermal Infrared Emitters Integrated into Silicon Photonic Waveguides
ACS photonics 11(8), 2961-2969 () [10.1021/acsphotonics.3c01892]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article (Review Article)  ;  ;  ; et al
Roadmap on Energy Harvesting Materials
JPhys materials 6(4), 042501 () [10.1088/2515-7639/acc550]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;
Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements
Advanced Materials Technologies 8(8), 2201587 () [10.1002/admt.202201587]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Graphene-based Wireless Agile Interconnects for Massive Heterogeneous Multi-chip Processors
IEEE wireless communications 30(4), 162-169 () [10.1109/MWC.010.2100561]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
How to report and benchmark emerging field-effect transistors
Nature electronics 5(7), 416-423 () [10.1038/s41928-022-00798-8]  GO BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;
2D materials for future heterogeneous electronics
Nature Communications 13, 1392 () [10.1038/s41467-022-29001-4]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Zero‐Bias Power‐Detector Circuits based on MoS$_{2}$ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates
Advanced materials 2108469 () [10.1002/adma.202108469]  GO OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2021-10-10, last modified 2023-02-09



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