Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Wiefels, Stefan; Waser, Rainer; Kopperberg, Nils; Otterstedt, Jan; Hofmann, Karl; Menzel, Stephan; Wouters, Dirk J.

doi:WOS:001094269400001

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

Wiefels, Stefan (Corresponding author) ; Kopperberg, Nils^RWTH* ; Hofmann, Karl ; Otterstedt, Jan ; Wouters, Dirk J.^RWTH* ; Waser, Rainer^RWTH* ; Menzel, Stephan

In
Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics / Issue Edited by: Matthias Wuttig, Regina Dittmann, Rainer

In
Physica status solidi / A 221(22), Seiten/Artikel-Nr.:2300401

2024 & 2023

ImpressumWeinheim : Wiley-VCH

Umfang1-13

ISSN1862-6319

First published: 20 September 2023

Online
DOI: 10.18154/RWTH-2023-10855
DOI: 10.1002/pssa.202300401
10.1002/pssa.202300401
URL: https://publications.rwth-aachen.de/record/973556/files/973556.pdf

Einrichtungen

Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
PDF

Dokumenttyp
Journal Article/Contribution to a book

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85175559578
WOS Core Collection: WOS:001094269400001

Interne Identnummern
RWTH-2023-10855
Datensatz-ID: 973556

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

Related:

Book Wuttig, M. (Editor)RWTH* ; Dittmann, R. (Editor) ; Waser, R. (Editor)RWTH*
Special Issue: Nanoswitches: Resistively Switching Chalcogenides for Future Electronics
Physica status solidi / A 221(22), (2024)2024 Fulltext BibTeX | EndNote: XML, Text | RIS

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