132210
Lehrstuhl für Experimentalphysik und II. Physikalisches Institut| ID | I:(DE-82)132210_20140620 |
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Contribution to a book/Contribution to a conference proceedings
High-fidelity single-electron shuttling in industrially fabricated spin qubit devices
2025 IEEE International Electron Devices Meeting (IEDM) : [Proceedings]
71. Annual IEEE International Electron Devices Meeting, IEDM 2025, San Francisco, CASan Francisco, CA, USA, 6 Dec 2025 - 10 Dec 2025
IEEE 4 Seiten (2025) [10.1109/IEDM50572.2025.11353490]
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High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Applied physics letters 127(8), 083503 (2025) [10.1063/5.0285958]
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Contribution to a book/Contribution to a conference proceedings
Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography
40th European Mask and Lithography Conference (EMLC 2025) : 16–18 June 2025, Dresden, Germany / Jo Finders, Ines Stolberg Editors ; Organized by VDE/VDI GMM – The Society of Microelectronics, Microsystems, and Precision Engineering (Germany)
40. European Mask and Lithography Conference, EMLC 2025, DresdenDresden, Germany, 16 Jun 2025 - 18 Jun 2025
SPIE, Proceedings of SPIE 13787, 6 Seiten (2025) [10.1117/12.3063352]
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Highly Structure-Selective On-Surface Synthesis of Isokekulene Versus Kekulene
Angewandte Chemie 137(36), e202509932 (2025) [10.1002/ange.202509932]
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Two-dimensional M2X2 (M =transition-metal; X =S,Se,Te) family with emerging semiconducting, semimetallic, and magnetic properties
Physical review materials 9(10), 104005 (2025) [10.1103/c2qq-vc5f]
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Solid-state analog of gravitational redshift: Transport signatures of massless Dirac fermions in tilted Dirac cone heterostructures
Physical review research 7(3), 033140 (2025) [10.1103/f9h1-krjk]
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Smart holes: analogue black holes with the right temperature and entropy
Journal of high energy physics : JHEP 2025(7), 226 (2025) [10.1007/JHEP07(2025)226]
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Large spin-shuttling oscillations enabling high-fidelity single-qubit gates
Physical review applied 24(3), 034029 (2025) [10.1103/4lky-413f]
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Industrially Fabricated Single-Electron Quantum Dots in Si/Si—Ge Heterostructures
IEEE electron device letters 46(5), 868-871 (2025) [10.1109/LED.2025.3553672]
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Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures
Journal of applied physics 137(2), 025301 (2025) [10.1063/5.0232252]
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All known publications ...
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