h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

EUV-LET 2.0 : a compact exposure tool for industrial research at a wavelength of 13.5nm

; ; ; ; ; ;

In
Extreme Ultraviolet (EUV) Lithography X : 25-28 February 2019, San Jose, California, Unites States / Kenneth A. Goldberg (editor) ; sponsored by: SPIE, Seiten/Artikel-Nr: 109571K

Konferenz/Event:Extreme Ultraviolet (EUV) Lithography X , San Jose, CA , USA , 2019-02-25 - 2019-02-28

ImpressumBellingham, Washington, USA : SPIE

Umfang109571K

ISBN978-1-5106-2561-7, 978-1-5106-2562-4

ReiheProceedings of SPIE ; 10957

Online
DOI: 10.1117/12.2513755


Einrichtungen

  1. Lehrstuhl für Technologie optischer Systeme (418910)
  2. Lehr- und Forschungsgebiet für Experimentalphysik (139420)
  3. JARA-FIT (080009)
  4. Fachgruppe Physik (130000)
  5. Fraunhofer-Institut für Lasertechnik - ILT (053100)



Dokumenttyp
Contribution to a book/Contribution to a conference proceedings

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85064560022
WOS Core Collection: WOS:000468221400032

Interne Identnummern
RWTH-2019-05372
Datensatz-ID: 762075

Beteiligte Länder
Germany

 GO


QR Code for this record

The record appears in these collections:
Document types > Events > Contributions to a conference proceedings
Document types > Books > Contributions to a book
Faculty of Mathematics and Natural Sciences (Fac.1) > Department of Physics
Faculty of Mechanical Engineering (Fac.4)
Affiliated Institutes and Associations
Central and Other Institutions
Public records
Publications database
080009
053100
130000
418910
139420

 Record created 2019-06-03, last modified 2025-10-20



Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)