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ama216

Lehr- und Forschungsgebiet Halbleitertechnologie
IDI:(DE-82)ama216_20140620

RWTH Aachen

Recent Publications

All known publications ...
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Process dependent interface states of Ag/(110) GaAs Schottky-diodes
Materials science forum 38/41, 1409-1414 ()  GO BibTeX | EndNote: XML, Text | RIS

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Influence of DUV excimer laser radiation ( = 193nm) on CMOS devices
Applied surface science 36, 421-431 ()  GO BibTeX | EndNote: XML, Text | RIS

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Novel organometallic starting materials for group III-V semiconductor metal-organic chemical vapor deposition
Thin solid films 174, 1-4 ()  GO BibTeX | EndNote: XML, Text | RIS

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III-V technology: The key for advanced devices
Journal of the Electrochemical Society : JES 136, 2680-2686 () [10.1149/1.2097549]  GO BibTeX | EndNote: XML, Text | RIS

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Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP
Journal of crystal growth 96(4), 982-984 () [10.1016/0022-0248(89)90660-X]  GO BibTeX | EndNote: XML, Text | RIS

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Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metal-organic vapor-phase epitaxy
Journal of applied physics 66, 697-703 ()  GO BibTeX | EndNote: XML, Text | RIS

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Growth of GaAs and InP on Si using plasma stimulated MOCVD
Journal of crystal growth 96, 483-489 ()  GO BibTeX | EndNote: XML, Text | RIS

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Nanometer lithography for III-V semiconductor wires using chloromethylated poly-* methylstrene resist
Journal of vacuum science & technology : JVST / B 6, 2308-2311 ()  GO BibTeX | EndNote: XML, Text | RIS

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Degradation of Cr- and MoSi2 photomasks by 193 nm excimer laser radiation
Microelectronic engineering 9, 65-68 ()  GO BibTeX | EndNote: XML, Text | RIS

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Process induced radiation damage in MOS structures
Microelectronic engineering 9, 611-614 ()  GO BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Datensatz erzeugt am 2014-11-17, letzte Änderung am 2020-01-14



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