ama216
Lehr- und Forschungsgebiet HalbleitertechnologieID | I:(DE-82)ama216_20140620 |
All known publications ...
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Journal Article
Process dependent interface states of Ag/(110) GaAs Schottky-diodes
Materials science forum 38/41, 1409-1414 (1989)
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Journal Article
Influence of DUV excimer laser radiation ( = 193nm) on CMOS devices
Applied surface science 36, 421-431 (1989)
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Journal Article
Novel organometallic starting materials for group III-V semiconductor metal-organic chemical vapor deposition
Thin solid films 174, 1-4 (1989)
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Journal Article
III-V technology: The key for advanced devices
Journal of the Electrochemical Society : JES 136, 2680-2686 (1989) [10.1149/1.2097549]
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Journal Article
Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP
Journal of crystal growth 96(4), 982-984 (1989) [10.1016/0022-0248(89)90660-X]
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Journal Article
Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metal-organic vapor-phase epitaxy
Journal of applied physics 66, 697-703 (1989)
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Journal Article
Growth of GaAs and InP on Si using plasma stimulated MOCVD
Journal of crystal growth 96, 483-489 (1989)
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Journal Article
Nanometer lithography for III-V semiconductor wires using chloromethylated poly-* methylstrene resist
Journal of vacuum science & technology : JVST / B 6, 2308-2311 (1989)
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Journal Article
Degradation of Cr- and MoSi2 photomasks by 193 nm excimer laser radiation
Microelectronic engineering 9, 65-68 (1989)
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Journal Article
Process induced radiation damage in MOS structures
Microelectronic engineering 9, 611-614 (1989)
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All known publications ...
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